We report high performance long wavelength Zn doped p-type QWIPs grown by MOVPE. The p-QWIP detectors were tested under normal incident illumination. The detectors demonstrated high performance, in contrast to previous reports on Zn doped p-QWIP. At 80 K, a bias of 2 V and a peak wavelength of 8.2 μm, a D* = 0.97 × 1010 cm Hz0.5/W was measured. The device exhibited a spectral electric field tunability of 2.7 μm. The photoluminescence spectra of the GaAs bulk and p-type GaAs well of the p-QWIP layer structure, were studied vs temperature and longitudinal electric field. The results of the photoluminescence spectra were correlated with the voltage tunability of the spectral response of the p-QWIP.