TY - JOUR
T1 - Voltage tunability of high performance Zn doped p-type QWIP grown by MOVPE
AU - Paltiel, Y.
AU - Zussman, A.
AU - Snapi, N.
AU - Sher, A.
AU - Jung, G.
AU - Cohen, K.
AU - Benory, E.
AU - Weiss, E.
PY - 2005/10
Y1 - 2005/10
N2 - We report high performance long wavelength Zn doped p-type QWIPs grown by MOVPE. The p-QWIP detectors were tested under normal incident illumination. The detectors demonstrated high performance, in contrast to previous reports on Zn doped p-QWIP. At 80 K, a bias of 2 V and a peak wavelength of 8.2 μm, a D* = 0.97 × 1010 cm Hz0.5/W was measured. The device exhibited a spectral electric field tunability of 2.7 μm. The photoluminescence spectra of the GaAs bulk and p-type GaAs well of the p-QWIP layer structure, were studied vs temperature and longitudinal electric field. The results of the photoluminescence spectra were correlated with the voltage tunability of the spectral response of the p-QWIP.
AB - We report high performance long wavelength Zn doped p-type QWIPs grown by MOVPE. The p-QWIP detectors were tested under normal incident illumination. The detectors demonstrated high performance, in contrast to previous reports on Zn doped p-QWIP. At 80 K, a bias of 2 V and a peak wavelength of 8.2 μm, a D* = 0.97 × 1010 cm Hz0.5/W was measured. The device exhibited a spectral electric field tunability of 2.7 μm. The photoluminescence spectra of the GaAs bulk and p-type GaAs well of the p-QWIP layer structure, were studied vs temperature and longitudinal electric field. The results of the photoluminescence spectra were correlated with the voltage tunability of the spectral response of the p-QWIP.
UR - http://www.scopus.com/inward/record.url?scp=24344497291&partnerID=8YFLogxK
U2 - 10.1016/j.infrared.2005.02.009
DO - 10.1016/j.infrared.2005.02.009
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AN - SCOPUS:24344497291
SN - 1350-4495
VL - 47
SP - 37
EP - 42
JO - Infrared Physics and Technology
JF - Infrared Physics and Technology
IS - 1-2
ER -