TY - JOUR
T1 - Wafer-scale assembly of highly ordered semiconductor nanowire arrays by contact printing
AU - Fan, Zhiyong
AU - Ho, Johnny C.
AU - Jacobson, Zachery A.
AU - Yerushalmi, Roie
AU - Alley, Robert L.
AU - Razavi, Haleh
AU - Javey, Ali
PY - 2008/1
Y1 - 2008/1
N2 - Controlled and uniform assembly of "bottom-up" nanowire (NW) materials with high scalability presents one of the significant bottleneck challenges facing the integration of nanowires for electronic applications. Here, we demonstrate wafer-scale assembly of highly ordered, dense, and regular arrays of NWs with high uniformity and reproducibility through a simple contact printing process. The assembled NW pitch is shown to be readily modulated through the surface chemical treatment of the receiver substrate, with the highest density approaching ∼8 NW/μm, ∼95% directional alignment, and wafer-scale uniformity. Such fine control in the assembly is attained by applying a lubricant during the contact printing process which significantly minimizes the NW-NW mechanical interactions, therefore enabling well-controlled transfer of nanowires through surface chemical binding interactions. Furthermore, we demonstrate that our printing approach enables large-scale integration of NW arrays for various device structures on both rigid silicon and flexible plastic substrates, with a controlled semiconductor channel width ranging from a single NW (∼10 nm) up to ∼250 μm, consisting of a parallel array of over 1250 NWs and delivering over 1 mA of ON current.
AB - Controlled and uniform assembly of "bottom-up" nanowire (NW) materials with high scalability presents one of the significant bottleneck challenges facing the integration of nanowires for electronic applications. Here, we demonstrate wafer-scale assembly of highly ordered, dense, and regular arrays of NWs with high uniformity and reproducibility through a simple contact printing process. The assembled NW pitch is shown to be readily modulated through the surface chemical treatment of the receiver substrate, with the highest density approaching ∼8 NW/μm, ∼95% directional alignment, and wafer-scale uniformity. Such fine control in the assembly is attained by applying a lubricant during the contact printing process which significantly minimizes the NW-NW mechanical interactions, therefore enabling well-controlled transfer of nanowires through surface chemical binding interactions. Furthermore, we demonstrate that our printing approach enables large-scale integration of NW arrays for various device structures on both rigid silicon and flexible plastic substrates, with a controlled semiconductor channel width ranging from a single NW (∼10 nm) up to ∼250 μm, consisting of a parallel array of over 1250 NWs and delivering over 1 mA of ON current.
UR - http://www.scopus.com/inward/record.url?scp=38749136202&partnerID=8YFLogxK
U2 - 10.1021/nl071626r
DO - 10.1021/nl071626r
M3 - ???researchoutput.researchoutputtypes.contributiontojournal.article???
AN - SCOPUS:38749136202
SN - 1530-6984
VL - 8
SP - 20
EP - 25
JO - Nano Letters
JF - Nano Letters
IS - 1
ER -