Waveguide based compact silicon Schottky photodetector with enhanced responsivity in the telecom spectral band

Ilya Goykhman*, Boris Desiatov, Jacob Khurgin, Joseph Shappir, Uriel Levy

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

166 Scopus citations

Abstract

We experimentally demonstrate an on-chip compact and simple to fabricate silicon Schottky photodetector for telecom wavelengths operating on the basis of internal photoemission process. The device is realized using CMOS compatible approach of local-oxidation of silicon, which enables the realization of the photodetector and low-loss bus photonic waveguide at the same fabrication step. The photodetector demonstrates enhanced internal responsivity of 12.5mA/W for operation wavelength of 1.55μm corresponding to an internal quantum efficiency of 1%, about two orders of magnitude higher than our previously demonstrated results [22]. We attribute this improved detection efficiency to the presence of surface roughness at the boundary between the materials forming the Schottky contact. The combination of enhanced quantum efficiency together with a simple fabrication process provides a promising platform for the realization of all silicon photodetectors and their integration with other nanophotonic and nanoplasmonic structures towards the construction of monolithic silicon opto-electronic circuitry on-chip.

Original languageAmerican English
Pages (from-to)28594-28602
Number of pages9
JournalOptics Express
Volume20
Issue number27
DOIs
StatePublished - 17 Dec 2012

Fingerprint

Dive into the research topics of 'Waveguide based compact silicon Schottky photodetector with enhanced responsivity in the telecom spectral band'. Together they form a unique fingerprint.

Cite this