Abstract
We present a micrometer-scale, on-chip integrated, plasmonic enhanced graphene photodetector (GPD) for telecom wavelengths operating at zero dark current. The GPD is designed to directly generate a photovoltage by the photothermoelectric effect. It is made of chemical vapor deposited single layer graphene, and has an external responsivity ∼12.2 V/W with a 3 dB bandwidth ∼42 GHz. We utilize Au split-gates to electrostatically create a p-n-junction and simultaneously guide a surface plasmon polariton gap-mode. This increases the light-graphene interaction and optical absorption and results in an increased electronic temperature and steeper temperature gradient across the GPD channel. This paves the way to compact, on-chip integrated, power-efficient graphene based photodetectors for receivers in tele- and datacom modules.
Original language | English |
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Pages (from-to) | 7632-7644 |
Number of pages | 13 |
Journal | Nano Letters |
Volume | 19 |
Issue number | 11 |
DOIs | |
State | Published - 13 Nov 2019 |
Externally published | Yes |
Bibliographical note
Publisher Copyright:Copyright © 2019 American Chemical Society.
Keywords
- Graphene
- integrated photonics
- photodetectors
- photothermoelectric effect
- plasmonics