Weak localization in indium oxide films

Z. Ovadyahu; S. Moehlecke; Yoseph Imry

doi:10.1016/0039-6028(82)90648-3

Weak localization in indium oxide films

Z. Ovadyahu^*, S. Moehlecke, Yoseph Imry

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

26 Scopus citations

Abstract

We have observed anomalous transport properties in films of conducting indium oxide in both three and two dimensions. It is found that the interplay between d, l and l_in(T) (the film's thickness, elastic and inelastic mean-free-paths, respectively) determines the system's dimensionality and the nature of the transport properties. In a previous study it was shown that experimental results on 2D samples of this material are adequately accounted for by modern localization theories. This conclusion is now being extended to the 3D range as well. At the same time we find strong evidence for the relevance of electron-electron interaction in both 2D and 3D samples below ~100K. In particular, the 3D → 2D crossover temperature as a function of d and the low-field negative magnetoresistance results agree quantitatively with a τ_in ~ h {combining short stroke overlay}/k_BT law for the temperature variation of the inelastic relaxation time.

Original language	English
Pages (from-to)	544-549
Number of pages	6
Journal	Surface Science
Volume	113
Issue number	1-3
DOIs	https://doi.org/10.1016/0039-6028(82)90648-3
State	Published - 1 Jan 1982
Externally published	Yes

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title = "Weak localization in indium oxide films",

abstract = "We have observed anomalous transport properties in films of conducting indium oxide in both three and two dimensions. It is found that the interplay between d, l and lin(T) (the film's thickness, elastic and inelastic mean-free-paths, respectively) determines the system's dimensionality and the nature of the transport properties. In a previous study it was shown that experimental results on 2D samples of this material are adequately accounted for by modern localization theories. This conclusion is now being extended to the 3D range as well. At the same time we find strong evidence for the relevance of electron-electron interaction in both 2D and 3D samples below ~100K. In particular, the 3D → 2D crossover temperature as a function of d and the low-field negative magnetoresistance results agree quantitatively with a τin ~ h {combining short stroke overlay}/kBT law for the temperature variation of the inelastic relaxation time.",

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T1 - Weak localization in indium oxide films

AU - Ovadyahu, Z.

AU - Moehlecke, S.

AU - Imry, Yoseph

PY - 1982/1/1

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N2 - We have observed anomalous transport properties in films of conducting indium oxide in both three and two dimensions. It is found that the interplay between d, l and lin(T) (the film's thickness, elastic and inelastic mean-free-paths, respectively) determines the system's dimensionality and the nature of the transport properties. In a previous study it was shown that experimental results on 2D samples of this material are adequately accounted for by modern localization theories. This conclusion is now being extended to the 3D range as well. At the same time we find strong evidence for the relevance of electron-electron interaction in both 2D and 3D samples below ~100K. In particular, the 3D → 2D crossover temperature as a function of d and the low-field negative magnetoresistance results agree quantitatively with a τin ~ h {combining short stroke overlay}/kBT law for the temperature variation of the inelastic relaxation time.

AB - We have observed anomalous transport properties in films of conducting indium oxide in both three and two dimensions. It is found that the interplay between d, l and lin(T) (the film's thickness, elastic and inelastic mean-free-paths, respectively) determines the system's dimensionality and the nature of the transport properties. In a previous study it was shown that experimental results on 2D samples of this material are adequately accounted for by modern localization theories. This conclusion is now being extended to the 3D range as well. At the same time we find strong evidence for the relevance of electron-electron interaction in both 2D and 3D samples below ~100K. In particular, the 3D → 2D crossover temperature as a function of d and the low-field negative magnetoresistance results agree quantitatively with a τin ~ h {combining short stroke overlay}/kBT law for the temperature variation of the inelastic relaxation time.

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Weak localization in indium oxide films

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