X-ray and infrared spectroscopy of layers produced by cosputtering of spatially separated SiO2 and Si sources

S. N. Shamin; V. R. Galakhov; V. I. Aksenova; A. N. Karpov; N. L. Shvartz; Z. Sh Yanovitskaya; V. A. Volodin; I. V. Antonova; T. B. Ezhevskaya; J. Jedrzejewski; E. Savir; I. Balberg

doi:10.1134/S1063782610040214

X-ray and infrared spectroscopy of layers produced by cosputtering of spatially separated SiO₂ and Si sources

S. N. Shamin, V. R. Galakhov, V. I. Aksenova, A. N. Karpov, N. L. Shvartz, Z. Sh Yanovitskaya, V. A. Volodin, I. V. Antonova, T. B. Ezhevskaya, J. Jedrzejewski, E. Savir, I. Balberg

Racah Institute of Physics

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10 Scopus citations

Abstract

Ultrasoft X-ray emission spectroscopy and infrared spectroscopy are used to study the Si/SiO₂ composite structure produced by deposition from the Si and SiO₂ sources onto the Si substrate. Separation of the sources by a rather long distance (96 mm) made it possible to vary the composition of the layer along the direction parallel to the sample surface in a wide range from almost pure SiO₂ to Si. On the basis of the X-ray emission Si L_{2, 3} spectra, amorphous silicon a-Si and silicon oxide SiO₂ were identified in the layers. The infrared spectra show that there are Si nanocrystals in the layers. Variations in the content of Si/SiO₂ along the direction parallel to the wafer surface are established. The data obtained by the above-mentioned techniques are correlated with the results of calculations of the layer composition and with the data of profilometric measurements of the layer thicknesses.

Original language	English
Pages (from-to)	531-536
Number of pages	6
Journal	Semiconductors
Volume	44
Issue number	4
DOIs	https://doi.org/10.1134/S1063782610040214
State	Published - 2010

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Shamin, S. N., Galakhov, V. R., Aksenova, V. I., Karpov, A. N., Shvartz, N. L., Yanovitskaya, Z. S., Volodin, V. A., Antonova, I. V., Ezhevskaya, T. B., Jedrzejewski, J., Savir, E., & Balberg, I. (2010). X-ray and infrared spectroscopy of layers produced by cosputtering of spatially separated SiO₂ and Si sources. Semiconductors, 44(4), 531-536. https://doi.org/10.1134/S1063782610040214

@article{b4c8fce2c91e4459a1e242454e0bea8e,

title = "X-ray and infrared spectroscopy of layers produced by cosputtering of spatially separated SiO2 and Si sources",

abstract = "Ultrasoft X-ray emission spectroscopy and infrared spectroscopy are used to study the Si/SiO2 composite structure produced by deposition from the Si and SiO2 sources onto the Si substrate. Separation of the sources by a rather long distance (96 mm) made it possible to vary the composition of the layer along the direction parallel to the sample surface in a wide range from almost pure SiO2 to Si. On the basis of the X-ray emission Si L2, 3 spectra, amorphous silicon a-Si and silicon oxide SiO2 were identified in the layers. The infrared spectra show that there are Si nanocrystals in the layers. Variations in the content of Si/SiO2 along the direction parallel to the wafer surface are established. The data obtained by the above-mentioned techniques are correlated with the results of calculations of the layer composition and with the data of profilometric measurements of the layer thicknesses.",

author = "Shamin, {S. N.} and Galakhov, {V. R.} and Aksenova, {V. I.} and Karpov, {A. N.} and Shvartz, {N. L.} and Yanovitskaya, {Z. Sh} and Volodin, {V. A.} and Antonova, {I. V.} and Ezhevskaya, {T. B.} and J. Jedrzejewski and E. Savir and I. Balberg",

year = "2010",

doi = "10.1134/S1063782610040214",

language = "אנגלית",

volume = "44",

pages = "531--536",

journal = "Semiconductors",

issn = "1063-7826",

publisher = "Pleiades Publishing",

number = "4",

}

Shamin, SN, Galakhov, VR, Aksenova, VI, Karpov, AN, Shvartz, NL, Yanovitskaya, ZS, Volodin, VA, Antonova, IV, Ezhevskaya, TB, Jedrzejewski, J, Savir, E & Balberg, I 2010, 'X-ray and infrared spectroscopy of layers produced by cosputtering of spatially separated SiO₂ and Si sources', Semiconductors, vol. 44, no. 4, pp. 531-536. https://doi.org/10.1134/S1063782610040214

TY - JOUR

T1 - X-ray and infrared spectroscopy of layers produced by cosputtering of spatially separated SiO2 and Si sources

AU - Shamin, S. N.

AU - Galakhov, V. R.

AU - Aksenova, V. I.

AU - Karpov, A. N.

AU - Shvartz, N. L.

AU - Yanovitskaya, Z. Sh

AU - Volodin, V. A.

AU - Antonova, I. V.

AU - Ezhevskaya, T. B.

AU - Jedrzejewski, J.

AU - Savir, E.

AU - Balberg, I.

PY - 2010

Y1 - 2010

N2 - Ultrasoft X-ray emission spectroscopy and infrared spectroscopy are used to study the Si/SiO2 composite structure produced by deposition from the Si and SiO2 sources onto the Si substrate. Separation of the sources by a rather long distance (96 mm) made it possible to vary the composition of the layer along the direction parallel to the sample surface in a wide range from almost pure SiO2 to Si. On the basis of the X-ray emission Si L2, 3 spectra, amorphous silicon a-Si and silicon oxide SiO2 were identified in the layers. The infrared spectra show that there are Si nanocrystals in the layers. Variations in the content of Si/SiO2 along the direction parallel to the wafer surface are established. The data obtained by the above-mentioned techniques are correlated with the results of calculations of the layer composition and with the data of profilometric measurements of the layer thicknesses.

AB - Ultrasoft X-ray emission spectroscopy and infrared spectroscopy are used to study the Si/SiO2 composite structure produced by deposition from the Si and SiO2 sources onto the Si substrate. Separation of the sources by a rather long distance (96 mm) made it possible to vary the composition of the layer along the direction parallel to the sample surface in a wide range from almost pure SiO2 to Si. On the basis of the X-ray emission Si L2, 3 spectra, amorphous silicon a-Si and silicon oxide SiO2 were identified in the layers. The infrared spectra show that there are Si nanocrystals in the layers. Variations in the content of Si/SiO2 along the direction parallel to the wafer surface are established. The data obtained by the above-mentioned techniques are correlated with the results of calculations of the layer composition and with the data of profilometric measurements of the layer thicknesses.

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X-ray and infrared spectroscopy of layers produced by cosputtering of spatially separated SiO₂ and Si sources

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