Abstract
The yield of HgI2 vapor grown platelets in the presence of polythylene is reported here for the first time to be dependent on the ampoule geometry. The quality of the HgI2 platelets was characterized in terms of each pit density, traping time, surface recombination velocity and spectral response using X- and γ-ray spectrometers. The above parameters were measured for HgI2 platelets and compared with the Temperature Oscillation Method (TOM) grown bulk HgI2 crystals.
Original language | English |
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Pages (from-to) | 643-648 |
Number of pages | 6 |
Journal | Journal of Crystal Growth |
Volume | 72 |
Issue number | 3 |
DOIs | |
State | Published - Sep 1985 |