Zn-doped GaSb epitaxial film absorption coefficients at terahertz frequencies and detector applications

Z. G. Hu; A. G.U. Perera; Y. Paltiel; A. Raizman; A. Sher

doi:10.1063/1.1977195

Zn-doped GaSb epitaxial film absorption coefficients at terahertz frequencies and detector applications

Z. G. Hu, A. G.U. Perera, Y. Paltiel, A. Raizman, A. Sher

Research output: Contribution to journal › Article › peer-review

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Abstract

The reflectance measurements of p -type GaSb:Zn epitaxial films with different hole concentrations, grown by metalorganic vapor-phase epitaxy, have been investigated in the 3-30-THz frequency region. The experimental spectra were fitted using a classical harmonic Lorentz oscillator and the Drude model, illustrating that the hole effective mass and the mobility change with the carrier concentration. The hole effective mass was found to vary from 0.22 m0 to 0.41 m0 as the carrier concentration changed from 3.5× 1017 to 3.8× 1018 cm-3. The mobility values derived from the reflectance measurements were slightly smaller than the values obtained from Hall-effect measurements. A sublinear relationship between the absorption coefficient and the hole concentration was found at a frequency of 3 THz. Those results can be used for designing GaSb-based terahertz detectors.

Original language	English
Article number	023511
Journal	Journal of Applied Physics
Volume	98
Issue number	2
DOIs	https://doi.org/10.1063/1.1977195
State	Published - 15 Jul 2005
Externally published	Yes

Bibliographical note

Funding Information:
The work was supported in part by the U.S. NSF under Grant No. ECS-0140434. The authors would like to acknowledge Dr. S. G. Matsik, M. B. M. Rinzan, and G. Ariyawansa for many fruitful discussions and technical support.

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title = "Zn-doped GaSb epitaxial film absorption coefficients at terahertz frequencies and detector applications",

abstract = "The reflectance measurements of p -type GaSb:Zn epitaxial films with different hole concentrations, grown by metalorganic vapor-phase epitaxy, have been investigated in the 3-30-THz frequency region. The experimental spectra were fitted using a classical harmonic Lorentz oscillator and the Drude model, illustrating that the hole effective mass and the mobility change with the carrier concentration. The hole effective mass was found to vary from 0.22 m0 to 0.41 m0 as the carrier concentration changed from 3.5× 1017 to 3.8× 1018 cm-3. The mobility values derived from the reflectance measurements were slightly smaller than the values obtained from Hall-effect measurements. A sublinear relationship between the absorption coefficient and the hole concentration was found at a frequency of 3 THz. Those results can be used for designing GaSb-based terahertz detectors.",

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AU - Paltiel, Y.

AU - Raizman, A.

AU - Sher, A.

N1 - Funding Information: The work was supported in part by the U.S. NSF under Grant No. ECS-0140434. The authors would like to acknowledge Dr. S. G. Matsik, M. B. M. Rinzan, and G. Ariyawansa for many fruitful discussions and technical support.

PY - 2005/7/15

Y1 - 2005/7/15

N2 - The reflectance measurements of p -type GaSb:Zn epitaxial films with different hole concentrations, grown by metalorganic vapor-phase epitaxy, have been investigated in the 3-30-THz frequency region. The experimental spectra were fitted using a classical harmonic Lorentz oscillator and the Drude model, illustrating that the hole effective mass and the mobility change with the carrier concentration. The hole effective mass was found to vary from 0.22 m0 to 0.41 m0 as the carrier concentration changed from 3.5× 1017 to 3.8× 1018 cm-3. The mobility values derived from the reflectance measurements were slightly smaller than the values obtained from Hall-effect measurements. A sublinear relationship between the absorption coefficient and the hole concentration was found at a frequency of 3 THz. Those results can be used for designing GaSb-based terahertz detectors.

AB - The reflectance measurements of p -type GaSb:Zn epitaxial films with different hole concentrations, grown by metalorganic vapor-phase epitaxy, have been investigated in the 3-30-THz frequency region. The experimental spectra were fitted using a classical harmonic Lorentz oscillator and the Drude model, illustrating that the hole effective mass and the mobility change with the carrier concentration. The hole effective mass was found to vary from 0.22 m0 to 0.41 m0 as the carrier concentration changed from 3.5× 1017 to 3.8× 1018 cm-3. The mobility values derived from the reflectance measurements were slightly smaller than the values obtained from Hall-effect measurements. A sublinear relationship between the absorption coefficient and the hole concentration was found at a frequency of 3 THz. Those results can be used for designing GaSb-based terahertz detectors.

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Zn-doped GaSb epitaxial film absorption coefficients at terahertz frequencies and detector applications

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