Abstract
Doped heavy metal-free III–V semiconductor nanocrystal quantum dots (QDs) are of great interest both from the fundamental aspects of doping in highly confined structures, and from the applicative side of utilizing such building blocks in the fabrication of p–n homojunction devices. InAs nanocrystals (NCs), that are of particular relevance for short-wave IR detection and emission applications, manifest heavy n-type character poising a challenge for their transition to p-type behavior. The p-type doping of InAs NCs is presented with Zn – enabling control over the charge carrier type in InAs QDs field effect transistors. The post-synthesis doping reaction mechanism is studied for Zn precursors with varying reactivity. Successful p-type doping is achieved by the more reactive precursor, diethylzinc. Substitutional doping by Zn2+ replacing In3+ is established by X-ray absorption spectroscopy analysis. Furthermore, enhanced near infrared photoluminescence is observed due to surface passivation by Zn as indicated from elemental mapping utilizing high-resolution electron microscopy corroborated by X-ray photoelectron spectroscopy study. The demonstrated ability to control the carrier type, along with the improved emission characteristics, paves the way towards fabrication of optoelectronic devices active in the short-wave infrared region utilizing heavy-metal free nanocrystal building blocks.
Original language | American English |
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Article number | 2208332 |
Journal | Advanced Materials |
Volume | 35 |
Issue number | 5 |
DOIs | |
State | Published - 2 Feb 2023 |
Bibliographical note
Funding Information:This material was based upon work supported by the European Research Council (ERC) under the grant the European Union's Horizon 2020 program, grant agreement number 741767, advanced investigator grant CoupledNC (U.B.) and the US National Science Foundation under Award 2102299 to A.I.F. This research used beamline 7-BM (QAS) of the National Synchrotron Light Source II, a US DOE Office of Science User Facility operated for the DOE Office of Science by Brookhaven National Laboratory under Contract No. DE-SC0012704. Beamline operations were supported in part by the Synchrotron Catalysis Consortium (US DOE, Office of Basic Energy Sciences, Grant No. DE-SC0012335). The authors thank Drs. Lu Ma, Steven Ehrlich, and Nebojsa Marinkovic for their help with the beamline measurements at the QAS beamline. The authors thank Dr. Vitaly Gutkin and Dr. Sergei Remennik from the Unit for Nanocharacterization of the Center for Nanoscience and Nanotechnology at the Hebrew University of Jerusalem for assistance in the materials characterization and for helpful discussions. The authors also acknowledge the technical support of the staff of the Unit for Nanofabrication at the Center for Nanoscience and Nanotechnology at the Hebrew University of Jerusalem. U.B. thanks the Alfred & Erica Larisch memorial chair.
Funding Information:
This material was based upon work supported by the European Research Council (ERC) under the grant the European Union's Horizon 2020 program, grant agreement number 741767, advanced investigator grant CoupledNC (U.B.) and the US National Science Foundation under Award 2102299 to A.I.F. This research used beamline 7‐BM (QAS) of the National Synchrotron Light Source II, a US DOE Office of Science User Facility operated for the DOE Office of Science by Brookhaven National Laboratory under Contract No. DE‐SC0012704. Beamline operations were supported in part by the Synchrotron Catalysis Consortium (US DOE, Office of Basic Energy Sciences, Grant No. DE‐SC0012335). The authors thank Drs. Lu Ma, Steven Ehrlich, and Nebojsa Marinkovic for their help with the beamline measurements at the QAS beamline. The authors thank Dr. Vitaly Gutkin and Dr. Sergei Remennik from the Unit for Nanocharacterization of the Center for Nanoscience and Nanotechnology at the Hebrew University of Jerusalem for assistance in the materials characterization and for helpful discussions. The authors also acknowledge the technical support of the staff of the Unit for Nanofabrication at the Center for Nanoscience and Nanotechnology at the Hebrew University of Jerusalem. U.B. thanks the Alfred & Erica Larisch memorial chair.
Publisher Copyright:
© 2022 The Authors. Advanced Materials published by Wiley-VCH GmbH.
Keywords
- Near infrared
- colloidal InAs quantum dots
- doping
- heavy metal-free
- printed electronics