Zn-Doped P-Type InAs Nanocrystal Quantum Dots

Lior Asor; Jing Liu; Shuting Xiang; Nir Tessler; Anatoly I. Frenkel; Uri Banin

doi:10.1002/adma.202208332

Zn-Doped P-Type InAs Nanocrystal Quantum Dots

Lior Asor, Jing Liu, Shuting Xiang, Nir Tessler, Anatoly I. Frenkel^*, Uri Banin^*

^*Corresponding author for this work

Institute of Chemistry

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

Doped heavy metal-free III–V semiconductor nanocrystal quantum dots (QDs) are of great interest both from the fundamental aspects of doping in highly confined structures, and from the applicative side of utilizing such building blocks in the fabrication of p–n homojunction devices. InAs nanocrystals (NCs), that are of particular relevance for short-wave IR detection and emission applications, manifest heavy n-type character poising a challenge for their transition to p-type behavior. The p-type doping of InAs NCs is presented with Zn – enabling control over the charge carrier type in InAs QDs field effect transistors. The post-synthesis doping reaction mechanism is studied for Zn precursors with varying reactivity. Successful p-type doping is achieved by the more reactive precursor, diethylzinc. Substitutional doping by Zn²⁺ replacing In³⁺ is established by X-ray absorption spectroscopy analysis. Furthermore, enhanced near infrared photoluminescence is observed due to surface passivation by Zn as indicated from elemental mapping utilizing high-resolution electron microscopy corroborated by X-ray photoelectron spectroscopy study. The demonstrated ability to control the carrier type, along with the improved emission characteristics, paves the way towards fabrication of optoelectronic devices active in the short-wave infrared region utilizing heavy-metal free nanocrystal building blocks.

Original language	American English
Article number	2208332
Journal	Advanced Materials
Volume	35
Issue number	5
DOIs	https://doi.org/10.1002/adma.202208332
State	Published - 2 Feb 2023

Bibliographical note

Funding Information:
This material was based upon work supported by the European Research Council (ERC) under the grant the European Union's Horizon 2020 program, grant agreement number 741767, advanced investigator grant CoupledNC (U.B.) and the US National Science Foundation under Award 2102299 to A.I.F. This research used beamline 7-BM (QAS) of the National Synchrotron Light Source II, a US DOE Office of Science User Facility operated for the DOE Office of Science by Brookhaven National Laboratory under Contract No. DE-SC0012704. Beamline operations were supported in part by the Synchrotron Catalysis Consortium (US DOE, Office of Basic Energy Sciences, Grant No. DE-SC0012335). The authors thank Drs. Lu Ma, Steven Ehrlich, and Nebojsa Marinkovic for their help with the beamline measurements at the QAS beamline. The authors thank Dr. Vitaly Gutkin and Dr. Sergei Remennik from the Unit for Nanocharacterization of the Center for Nanoscience and Nanotechnology at the Hebrew University of Jerusalem for assistance in the materials characterization and for helpful discussions. The authors also acknowledge the technical support of the staff of the Unit for Nanofabrication at the Center for Nanoscience and Nanotechnology at the Hebrew University of Jerusalem. U.B. thanks the Alfred & Erica Larisch memorial chair.

Funding Information:
This material was based upon work supported by the European Research Council (ERC) under the grant the European Union's Horizon 2020 program, grant agreement number 741767, advanced investigator grant CoupledNC (U.B.) and the US National Science Foundation under Award 2102299 to A.I.F. This research used beamline 7‐BM (QAS) of the National Synchrotron Light Source II, a US DOE Office of Science User Facility operated for the DOE Office of Science by Brookhaven National Laboratory under Contract No. DE‐SC0012704. Beamline operations were supported in part by the Synchrotron Catalysis Consortium (US DOE, Office of Basic Energy Sciences, Grant No. DE‐SC0012335). The authors thank Drs. Lu Ma, Steven Ehrlich, and Nebojsa Marinkovic for their help with the beamline measurements at the QAS beamline. The authors thank Dr. Vitaly Gutkin and Dr. Sergei Remennik from the Unit for Nanocharacterization of the Center for Nanoscience and Nanotechnology at the Hebrew University of Jerusalem for assistance in the materials characterization and for helpful discussions. The authors also acknowledge the technical support of the staff of the Unit for Nanofabrication at the Center for Nanoscience and Nanotechnology at the Hebrew University of Jerusalem. U.B. thanks the Alfred & Erica Larisch memorial chair.

Publisher Copyright:
© 2022 The Authors. Advanced Materials published by Wiley-VCH GmbH.

Keywords

Near infrared
colloidal InAs quantum dots
doping
heavy metal-free
printed electronics

Access to Document

10.1002/adma.202208332

Cite this

@article{d3bf7fc1056e4193a40c2e2ca2983751,

title = "Zn-Doped P-Type InAs Nanocrystal Quantum Dots",

abstract = "Doped heavy metal-free III–V semiconductor nanocrystal quantum dots (QDs) are of great interest both from the fundamental aspects of doping in highly confined structures, and from the applicative side of utilizing such building blocks in the fabrication of p–n homojunction devices. InAs nanocrystals (NCs), that are of particular relevance for short-wave IR detection and emission applications, manifest heavy n-type character poising a challenge for their transition to p-type behavior. The p-type doping of InAs NCs is presented with Zn – enabling control over the charge carrier type in InAs QDs field effect transistors. The post-synthesis doping reaction mechanism is studied for Zn precursors with varying reactivity. Successful p-type doping is achieved by the more reactive precursor, diethylzinc. Substitutional doping by Zn2+ replacing In3+ is established by X-ray absorption spectroscopy analysis. Furthermore, enhanced near infrared photoluminescence is observed due to surface passivation by Zn as indicated from elemental mapping utilizing high-resolution electron microscopy corroborated by X-ray photoelectron spectroscopy study. The demonstrated ability to control the carrier type, along with the improved emission characteristics, paves the way towards fabrication of optoelectronic devices active in the short-wave infrared region utilizing heavy-metal free nanocrystal building blocks.",

keywords = "Near infrared, colloidal InAs quantum dots, doping, heavy metal-free, printed electronics",

author = "Lior Asor and Jing Liu and Shuting Xiang and Nir Tessler and Frenkel, {Anatoly I.} and Uri Banin",

note = "Funding Information: This material was based upon work supported by the European Research Council (ERC) under the grant the European Union's Horizon 2020 program, grant agreement number 741767, advanced investigator grant CoupledNC (U.B.) and the US National Science Foundation under Award 2102299 to A.I.F. This research used beamline 7-BM (QAS) of the National Synchrotron Light Source II, a US DOE Office of Science User Facility operated for the DOE Office of Science by Brookhaven National Laboratory under Contract No. DE-SC0012704. Beamline operations were supported in part by the Synchrotron Catalysis Consortium (US DOE, Office of Basic Energy Sciences, Grant No. DE-SC0012335). The authors thank Drs. Lu Ma, Steven Ehrlich, and Nebojsa Marinkovic for their help with the beamline measurements at the QAS beamline. The authors thank Dr. Vitaly Gutkin and Dr. Sergei Remennik from the Unit for Nanocharacterization of the Center for Nanoscience and Nanotechnology at the Hebrew University of Jerusalem for assistance in the materials characterization and for helpful discussions. The authors also acknowledge the technical support of the staff of the Unit for Nanofabrication at the Center for Nanoscience and Nanotechnology at the Hebrew University of Jerusalem. U.B. thanks the Alfred & Erica Larisch memorial chair. Funding Information: This material was based upon work supported by the European Research Council (ERC) under the grant the European Union's Horizon 2020 program, grant agreement number 741767, advanced investigator grant CoupledNC (U.B.) and the US National Science Foundation under Award 2102299 to A.I.F. This research used beamline 7‐BM (QAS) of the National Synchrotron Light Source II, a US DOE Office of Science User Facility operated for the DOE Office of Science by Brookhaven National Laboratory under Contract No. DE‐SC0012704. Beamline operations were supported in part by the Synchrotron Catalysis Consortium (US DOE, Office of Basic Energy Sciences, Grant No. DE‐SC0012335). The authors thank Drs. Lu Ma, Steven Ehrlich, and Nebojsa Marinkovic for their help with the beamline measurements at the QAS beamline. The authors thank Dr. Vitaly Gutkin and Dr. Sergei Remennik from the Unit for Nanocharacterization of the Center for Nanoscience and Nanotechnology at the Hebrew University of Jerusalem for assistance in the materials characterization and for helpful discussions. The authors also acknowledge the technical support of the staff of the Unit for Nanofabrication at the Center for Nanoscience and Nanotechnology at the Hebrew University of Jerusalem. U.B. thanks the Alfred & Erica Larisch memorial chair. Publisher Copyright: {\textcopyright} 2022 The Authors. Advanced Materials published by Wiley-VCH GmbH.",

year = "2023",

month = feb,

day = "2",

doi = "10.1002/adma.202208332",

language = "American English",

volume = "35",

journal = "Advanced Materials",

issn = "0935-9648",

publisher = "Wiley-Blackwell",

number = "5",

}

TY - JOUR

T1 - Zn-Doped P-Type InAs Nanocrystal Quantum Dots

AU - Asor, Lior

AU - Liu, Jing

AU - Xiang, Shuting

AU - Tessler, Nir

AU - Frenkel, Anatoly I.

AU - Banin, Uri

N1 - Funding Information: This material was based upon work supported by the European Research Council (ERC) under the grant the European Union's Horizon 2020 program, grant agreement number 741767, advanced investigator grant CoupledNC (U.B.) and the US National Science Foundation under Award 2102299 to A.I.F. This research used beamline 7-BM (QAS) of the National Synchrotron Light Source II, a US DOE Office of Science User Facility operated for the DOE Office of Science by Brookhaven National Laboratory under Contract No. DE-SC0012704. Beamline operations were supported in part by the Synchrotron Catalysis Consortium (US DOE, Office of Basic Energy Sciences, Grant No. DE-SC0012335). The authors thank Drs. Lu Ma, Steven Ehrlich, and Nebojsa Marinkovic for their help with the beamline measurements at the QAS beamline. The authors thank Dr. Vitaly Gutkin and Dr. Sergei Remennik from the Unit for Nanocharacterization of the Center for Nanoscience and Nanotechnology at the Hebrew University of Jerusalem for assistance in the materials characterization and for helpful discussions. The authors also acknowledge the technical support of the staff of the Unit for Nanofabrication at the Center for Nanoscience and Nanotechnology at the Hebrew University of Jerusalem. U.B. thanks the Alfred & Erica Larisch memorial chair. Funding Information: This material was based upon work supported by the European Research Council (ERC) under the grant the European Union's Horizon 2020 program, grant agreement number 741767, advanced investigator grant CoupledNC (U.B.) and the US National Science Foundation under Award 2102299 to A.I.F. This research used beamline 7‐BM (QAS) of the National Synchrotron Light Source II, a US DOE Office of Science User Facility operated for the DOE Office of Science by Brookhaven National Laboratory under Contract No. DE‐SC0012704. Beamline operations were supported in part by the Synchrotron Catalysis Consortium (US DOE, Office of Basic Energy Sciences, Grant No. DE‐SC0012335). The authors thank Drs. Lu Ma, Steven Ehrlich, and Nebojsa Marinkovic for their help with the beamline measurements at the QAS beamline. The authors thank Dr. Vitaly Gutkin and Dr. Sergei Remennik from the Unit for Nanocharacterization of the Center for Nanoscience and Nanotechnology at the Hebrew University of Jerusalem for assistance in the materials characterization and for helpful discussions. The authors also acknowledge the technical support of the staff of the Unit for Nanofabrication at the Center for Nanoscience and Nanotechnology at the Hebrew University of Jerusalem. U.B. thanks the Alfred & Erica Larisch memorial chair. Publisher Copyright: © 2022 The Authors. Advanced Materials published by Wiley-VCH GmbH.

PY - 2023/2/2

Y1 - 2023/2/2

N2 - Doped heavy metal-free III–V semiconductor nanocrystal quantum dots (QDs) are of great interest both from the fundamental aspects of doping in highly confined structures, and from the applicative side of utilizing such building blocks in the fabrication of p–n homojunction devices. InAs nanocrystals (NCs), that are of particular relevance for short-wave IR detection and emission applications, manifest heavy n-type character poising a challenge for their transition to p-type behavior. The p-type doping of InAs NCs is presented with Zn – enabling control over the charge carrier type in InAs QDs field effect transistors. The post-synthesis doping reaction mechanism is studied for Zn precursors with varying reactivity. Successful p-type doping is achieved by the more reactive precursor, diethylzinc. Substitutional doping by Zn2+ replacing In3+ is established by X-ray absorption spectroscopy analysis. Furthermore, enhanced near infrared photoluminescence is observed due to surface passivation by Zn as indicated from elemental mapping utilizing high-resolution electron microscopy corroborated by X-ray photoelectron spectroscopy study. The demonstrated ability to control the carrier type, along with the improved emission characteristics, paves the way towards fabrication of optoelectronic devices active in the short-wave infrared region utilizing heavy-metal free nanocrystal building blocks.

AB - Doped heavy metal-free III–V semiconductor nanocrystal quantum dots (QDs) are of great interest both from the fundamental aspects of doping in highly confined structures, and from the applicative side of utilizing such building blocks in the fabrication of p–n homojunction devices. InAs nanocrystals (NCs), that are of particular relevance for short-wave IR detection and emission applications, manifest heavy n-type character poising a challenge for their transition to p-type behavior. The p-type doping of InAs NCs is presented with Zn – enabling control over the charge carrier type in InAs QDs field effect transistors. The post-synthesis doping reaction mechanism is studied for Zn precursors with varying reactivity. Successful p-type doping is achieved by the more reactive precursor, diethylzinc. Substitutional doping by Zn2+ replacing In3+ is established by X-ray absorption spectroscopy analysis. Furthermore, enhanced near infrared photoluminescence is observed due to surface passivation by Zn as indicated from elemental mapping utilizing high-resolution electron microscopy corroborated by X-ray photoelectron spectroscopy study. The demonstrated ability to control the carrier type, along with the improved emission characteristics, paves the way towards fabrication of optoelectronic devices active in the short-wave infrared region utilizing heavy-metal free nanocrystal building blocks.

KW - Near infrared

KW - colloidal InAs quantum dots

KW - doping

KW - heavy metal-free

KW - printed electronics

UR - http://www.scopus.com/inward/record.url?scp=85144219005&partnerID=8YFLogxK

U2 - 10.1002/adma.202208332

DO - 10.1002/adma.202208332

M3 - Article

C2 - 36398421

AN - SCOPUS:85144219005

SN - 0935-9648

VL - 35

JO - Advanced Materials

JF - Advanced Materials

IS - 5

M1 - 2208332

ER -

Zn-Doped P-Type InAs Nanocrystal Quantum Dots

Abstract

Bibliographical note

Keywords

Access to Document

Other files and links

Fingerprint

Cite this