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Zn-Doped P-Type InAs Nanocrystal Quantum Dots
Lior Asor
, Jing Liu
, Shuting Xiang
, Nir Tessler
, Anatoly I. Frenkel
*
,
Uri Banin
*
*
Corresponding author for this work
Institute of Chemistry
Research output
:
Contribution to journal
›
Article
›
peer-review
52
Scopus citations
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Keyphrases
Nanocrystal Quantum Dots
100%
InAs Nanocrystals
100%
P-type
100%
Zn-doped
100%
P-type Doping
66%
Metal-free
66%
Spectroscopy Studies
33%
X-ray Absorption Spectroscopy
33%
Nanocrystals
33%
X-ray Photoelectron Spectroscopy
33%
Zn2+
33%
Reaction Mechanism
33%
Semiconductor Nanocrystals
33%
InAs Quantum Dots
33%
Field-effect Transistors
33%
Post-synthesis
33%
Confined Structure
33%
III-V Semiconductors
33%
Spectroscopic Analysis
33%
Short-wave Infrared
33%
Surface Passivation
33%
Enabling Control
33%
Carrier Type
33%
High-resolution Electron Microscopy
33%
Shortwave
33%
IR Emission
33%
Substitutional Doping
33%
In3+
33%
Homojunction
33%
Emission Characteristics
33%
IR Detection
33%
Charge Carrier Type
33%
Diethylzinc
33%
Elemental Mapping
33%
Reactive Precursor
33%
Material Science
Quantum Dot
100%
Heavy Metal
66%
High-Resolution Transmission Electron Microscopy
33%
Charge Carrier
33%
X-Ray Absorption Spectroscopy
33%
X-Ray Photoelectron Spectroscopy
33%
Field Effect Transistor
33%
Surface Passivation
33%