Zn2GeO4 nanowires as efficient electron injection material for electroluminescent devices

Jiangxin Wang, Chaoyi Yan, Shlomo Magdassi, Pooi See Lee*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

16 Scopus citations


Pure phase Zn2GeO4 nanowires (NWs) were grown by the chemical vapor transport method on p-GaN: Mg/Al2O3 substrate. The as-grown Zn2GeO4 NWs exhibited n-type characteristic due to native defects and formed a p-n heterojunction with the p-GaN substrate. The unique energy level of Zn2GeO4 NWs promotes electron injection into GaN active region while suppressing hole injection into Zn2GeO4 NWs. The device exhibited an emission centered at 426 nm and a low turn-on voltage around 4 V. Zn 2GeO4 NWs are first reported in this paper as promising electron transport and injection material for electroluminescent devices.

Original languageAmerican English
Pages (from-to)6793-6796
Number of pages4
JournalACS applied materials & interfaces
Issue number15
StatePublished - 14 Aug 2013


  • electroluminescence
  • electron injection
  • light emitting diode
  • p-GaN
  • p-n heterojunction
  • zinc germinate nanowires


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